, o ne. 20 stern ave. springfield, new jersey 07081 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mje1 090 mn, mje1 093 pnp (s,licon> mje2090,htumje2093 mje1100.hrumje1103npn mje2100^mje2103 plastic medium-power complementary silicon transistors designed for use in driver and output stages in complementary audio amplifier applications. ? high dc current gam - hcg = 750 (win) @ ig = 30and 40 adc ? true three lead monolithic construction ? emitter-base resistors to prevent leakage multiplication are built in. ? available in two packages - case 90 or case 199 maximum ratings thermal characteristics characteristic thermal resistance. junction to case symbol ojc patio* iviat'si 5 s s 3 s po. power dissi = s s 8 i m? 1.8 unit c/w figure 1 - power derating x n x n k. n \ 20 id 60 u 100 120 140 isc tc, castemkratu?e(0c) ritino collector-enrnttr voltage collector-bau voltage ernimr-batt voltage collector current 6vte current total device diiupation @ tc ? 25c derate above 25c operating and storage junction ternperatinq range symbol vceo vcb veb 'c >b pd tj' titg mje1090 MJE10B1 mje1100 mje1u1 mje2mo mjejob1 mje2100 mje2101 60 60 mje1092 mje1m3 mje1102 mje1103 mje2092 mje2003 mjez102 mje2103 80 80 5.0 50 0 1 70 056 -55to?150 unit vdc vdc vijc adc adc watts w/c c 5.0 ampere darlington power transistors complementary silicon 60-80 volts 70 watts mje1090 mje109i mje1092 mje1093 mjeitoo mje1101 mje1102 mje1103 case 90-05 mje2090 mje20s1 mje20s5 mje20s3 mje210q mje3101 mje2102 mje2103 case 199-04 nj semi-conductors reserves the right to change test conditions, parameter limits and pa^ftge dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verity that datasheets are current before placing orders. quality semi-conductors
mje1090 thru mje1093 pnp/mje1100 thru mje1103 npn (continued) mje2090thru mje2093 pnp/mje2100 thru mje2103 npn electrical characteristics itc - 25c uniw oth.rwiw noi?d) chtraewtatte 1 symbol [ min | m? off characteristics cottmtor-entintr bfhkdown volug*"' (lc- 100 madc, ib? 0) mje1090, mje 1091, mje 1100. mje 1 101 mje2090, mje2091, mje2100. mje2101 mjet092, mje 1093, mje 1 k)2, mje 1 103 mje2092, mj62093, mje 2 102, mje2103 collector cutoff currant ivce-30vdc, is = 01 mje1090, mje1091.mje1100. mje1101 mje 2090, mje2091. mje210o, mjp2101 (vce - 40 vdc, ib - 0) mje 1092, mje 1093. mje1102, mj61103 mje 2092, mje2093. mje2102. mje 2 103 collktor cutoff current (vcb - rlud bvceo, l ' 0' (vcb - r??d bvceo. ie - o, tc - iooc> emitter cutoff currant (v8e - s.o vdc, lc * 0) bvceo 'ceo icbo iebo 60 60 80 80 - l : - ? - _ soo $00 soo 500 _j 0.2 2.0 2.0 unit vdc (jadc madc madc on characteristics (ii dc current giin (1c - 3.0 adc. vce "s.ovdcl mje1090. mje 1092, mje1100, mje1102 mje 2090, mje 2092, mje210o, mje2102 (1c - 4.0 adc, vce -3.0 vdc) mje 1091. mje 1093, mje 1101, mje 1103 mje2q91. mje20931mje2101, mje2103 collktor-emitttrs*tur>tion voltag* (1c -3.0 adc, i8- 12made) mje1090. mje 1092, mje 1100, mje1 102 mje2090, mje2092, mje2100, mje 2 102 (1c -*-0 adc, ib - 16madcl mje1091, mje1093, mje 1101, mje1103 mje2091. mje2093. mje2101. mj^103 bn*-emitt>r on voltagt (1c- 3.0 adc, vce *3.0 vocl mje 1090, mje 1092, mje 1 100, mje 1102 mje 2090. mje2092. mje2100. mje2102 (1c -4.0 adc. vce ? 3.0 vdc) mje1091.mje 1093, mje 1101. mje 1103 mje2091, mje2093. mje2101. mje2103 hfe vce isai) vbe(on) 750 750 750 750 - - - - - - 2.5 2.5 2.8 2.8 2.5 25 25 2.5 - vdc vdc dynamic characteristics snull-signd currtnt glin (ic - 3.0 adc. vce -3.0 vdc, i- 1.0 mhz) "1, 1.0 - - lu t.it pul? width < 300 |?. duty cycl* < 2 os figure 2 - dc saf6 operating area ? 1 iiconi flw? ; ? 25" 1, l wu c nakdlmn mind it lmiud , .. ? ?_ lnnitm ic-jsc ;-'mjeiom.i kx 1 , ? - - mje2090. 91 | - -- hjeiwo,oi|~ mjc2ioo, 01 ' ~ mje1d92.1 kjenra.a hje2w,0 i1" 1 ' s -=: \ \ z^ ? \ la u m n 10 20 30 so n 100 there are two limitanons on ihp power handling ability of a uansistor: junction tempuraiure and >?condarv bregkdown safe mi nign case temperatures, thermal limitations will reduce the power thai can be handled to values ivss than the limitations imposed by secondary breakdown (see an.415) e. couectofl emitttb yolt*ge [volts! pnp mjo090 e.??o tnru mje1093 mje2090 thru mjez093 figure 3 - darlington circuit schematic crnittar nfn hue 11 do ba?o
mje1090 thru mje1093 pnp/mje1100 thru mje1103 npn (continued) mje2090 thru mje2093 pnp/mje2100 thru mje2103 npn mj6109o mje 1091 mje 1092 mje 1093 mje1101 mje 1 102 mjel 103 [-8- u i/'f q ^1 ? fflh- |"tl? d -*hgh?- "1 t n <~^-l ml dim m a 16 b 12 c 3 0 1 f 3 g h 2 1 0 k 1$ m ~ r 1 u t =lf limeters n max 13 1638 :7 12^3 18 3.43 19 124 51 3.76 42; bsc sz, jil 113 0864 9 typ 91 2.1e 22 c.48 m it k ___. stv uj le2: pik 1, emitter 2. collector 3. base inches min 0.635 0495 0.125 0.043 0.138 0.18 0.105 0.032 0.075 0.245 max 0.645 0,135 0.049 0.148 bsc 0.115 o.ow o.m5 rvp o.ms 0.255 ote 1 leads within .005" bad of true position 1tpi atmmc mje2o9o mje 2091 f" mje 2092 mje2093 i mje2100 j mje2101 q mj62102 -t mje 2 103 \. d- l- l dim a b d f s h j k i m n a h s t u xk, vrf5^ ' \ r-i ifl hirn(r (?.jri y i . . millimeters min 16.08 12.57 0.51 3.61 2.51 2.67 0.43 14.73 2 16 3 1,47 4.78 1.91 0.81 6.99 6.22 max 16.33 12.83 j.4j 0.76 3.86 bsc 2.92 0.69 14.99 2.41 'yp 1.73 5.03 2.16 0.86 7.24 6.48 m itt ? s style 1: pin 1. base f 2 3 collector emitter inches min 0.633 0.435 0,125 0.020 0.142 0.10 0.105 0.017 0.580 0.085 3 0.058 tjt188 0.075 0.03t 0.275 0.245 max 0.643 0.505 0.1* 0.030 0.152 bsc 0.115 0.0 !7 0.590 0.095 typ 0.0 0.1 8? is 0.085 0.034 6.285 0.21 a oim "6" is to center line of leads.
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